FDS7760A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS7760A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 1123 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de FDS7760A MOSFET
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FDS7760A datasheet
fds7760a.pdf
January 2002 FDS7760A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 8 m @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Low gate
fds7764s.pdf
September 2002 FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 9.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, provi
fds7779z.pdf
October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery charge
Otros transistores... FDS7082N3, FDS7088N3, FDS7088N7, FDS7088SN3, FDS7096N3, FDS7098N3, FDS7288N3, FDS7296N3, IRF3710, FDS7764S, FDS7779Z, FDS7788, FDS8670, FDS8812NZ, FDS8874, FDS9412A, FDT3N40TF
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