All MOSFET. FDS7760A Datasheet

 

FDS7760A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS7760A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SO-8

 FDS7760A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS7760A Datasheet (PDF)

 ..1. Size:73K  fairchild semi
 fds7760a.pdf

FDS7760A FDS7760A

January 2002 FDS7760A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 8 m @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Low gate

 8.1. Size:125K  fairchild semi
 fds7764s.pdf

FDS7760A FDS7760A

September 2002 FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 9.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, provi

 9.1. Size:293K  fairchild semi
 fds7779z.pdf

FDS7760A FDS7760A

October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery charge

 9.2. Size:417K  fairchild semi
 fds7788.pdf

FDS7760A FDS7760A

August 2008FDS778830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 18 A, 30 V. RDS(ON) = 4.0 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 5.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge

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