FDS7760A MOSFET Datasheet: N-Ch, 30V, 15A. Full specification with pinout and replacement list

FDS7760A Specs and Replacement

Type Designator: FDS7760A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: SO-8

FDS7760A substitution

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FDS7760A datasheet

..1. Size:73K fairchild semi
fds7760a.pdf pdf_icon

January 2002 FDS7760A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 8 m @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Low gate... See More ⇒

8.1. Size:125K fairchild semi
fds7764s.pdf pdf_icon

September 2002 FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 9.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, provi... See More ⇒

9.1. Size:293K fairchild semi
fds7779z.pdf pdf_icon

October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery charge... See More ⇒

9.2. Size:417K fairchild semi
fds7788.pdf pdf_icon