FDS9412A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS9412A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 14 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET FDS9412A
FDS9412A Datasheet (PDF)
fds9412a.pdf
February 2006FDS9412AN-Channel PowerTrench MOSFET 30V, 8A, 21mGeneral Description Features Max rDS(on) = 21m at VGS = 10V, ID = 8AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 25m at VGS = 4.5V, ID = 6.6A either synchronous or conventional switiching PWM controllers. It has been opti
fds9412.pdf
April 2000FDS9412Single N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced 7.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 36 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain V
fds9435a.pdf
October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave
fds9431a.pdf
September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistance and
fds9431a f085.pdf
February 2010tmFDS9431A_F085P-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistan
fds9400a.pdf
December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 200 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide r
fds9435a.pdf
FDS9435A 30V P-Channel PowerTrench Features MOSFET 5.3 A, 30 V R = 50 m @ V = 10 VDS(ON) GSGeneral Description R = 80 m @ V = 4.5 V DS(ON) GSThis P-Channel MOSFET is a rugged gate version of ON Low gate chargeSemiconductors advanced PowerTrench process. It has been optimized for power management applications requiring Fast switching speed
fds9431a.pdf
September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 VThis P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V.using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast
fds9435a-nl.pdf
FDS9435A-NLwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DT
fds9435.pdf
FDS9435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop V
fds9400a.pdf
FDS9400Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
Otros transistores... FDS7296N3 , FDS7760A , FDS7764S , FDS7779Z , FDS7788 , FDS8670 , FDS8812NZ , FDS8874 , STP75NF75 , FDT3N40TF , FDT461N , FDT55AN06LA0 , FDU044AN03L , FDU068AN03L , FDU2572 , FDU3580 , FDU3706 .
