FDS9412A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS9412A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SO-8

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FDS9412A Datasheet (PDF)

..1. Size:328K fairchild semi
fds9412a.pdf

February 2006FDS9412AN-Channel PowerTrench MOSFET 30V, 8A, 21mGeneral Description Features Max rDS(on) = 21m at VGS = 10V, ID = 8AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 25m at VGS = 4.5V, ID = 6.6A either synchronous or conventional switiching PWM controllers. It has been opti

7.1. Size:98K fairchild semi
fds9412.pdf

April 2000FDS9412Single N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced 7.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 36 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain V

9.1. Size:64K fairchild semi
fds9435a.pdf

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

9.2. Size:75K fairchild semi
fds9431a.pdf

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistance and

9.3. Size:358K fairchild semi
fds9431a f085.pdf

February 2010tmFDS9431A_F085P-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistan

9.4. Size:165K fairchild semi
fds9400a.pdf

December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 200 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide r

9.5. Size:194K onsemi
fds9435a.pdf

FDS9435A 30V P-Channel PowerTrench Features MOSFET 5.3 A, 30 V R = 50 m @ V = 10 VDS(ON) GSGeneral Description R = 80 m @ V = 4.5 V DS(ON) GSThis P-Channel MOSFET is a rugged gate version of ON Low gate chargeSemiconductors advanced PowerTrench process. It has been optimized for power management applications requiring Fast switching speed

9.6. Size:176K onsemi
fds9431a.pdf

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 VThis P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V.using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast

9.7. Size:840K cn vbsemi
fds9435a-nl.pdf

FDS9435A-NLwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DT

9.8. Size:1397K cn vbsemi
fds9435.pdf

FDS9435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop V

9.9. Size:805K cn vbsemi
fds9400a.pdf

FDS9400Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop

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