FDS9412A - описание и поиск аналогов

 ..1. Size:328K  fairchild semi
 fds9412a.pdf 

February 2006 FDS9412A N-Channel PowerTrench MOSFET 30V, 8A, 21m General Description Features Max rDS(on) = 21m at VGS = 10V, ID = 8A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 25m at VGS = 4.5V, ID = 6.6A either synchronous or conventional switiching PWM controllers. It has been opti

 7.1. Size:98K  fairchild semi
 fds9412.pdf 

April 2000 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced 7.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 36 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain V

 9.1. Size:64K  fairchild semi
 fds9435a.pdf 

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

 9.2. Size:75K  fairchild semi
 fds9431a.pdf 

September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and

 9.3. Size:358K  fairchild semi
 fds9431a f085.pdf 

February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistan

 9.4. Size:165K  fairchild semi
 fds9400a.pdf 

December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.4 A, 30 V RDS(ON) = 130 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 200 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide r

 9.5. Size:194K  onsemi
 fds9435a.pdf 

FDS9435A 30V P-Channel PowerTrench Features MOSFET 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS General Description R = 80 m @ V = 4.5 V DS(ON) GS This P-Channel MOSFET is a rugged gate version of ON Low gate charge Semiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring Fast switching speed

 9.6. Size:176K  onsemi
 fds9431a.pdf 

September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V This P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V. using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast

 9.7. Size:840K  cn vbsemi
 fds9435a-nl.pdf 

FDS9435A-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D T

 9.8. Size:1397K  cn vbsemi
 fds9435.pdf 

FDS9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top V

 9.9. Size:805K  cn vbsemi
 fds9400a.pdf 

FDS9400A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top