FDU6N50TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDU6N50TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: I-PAK

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FDU6N50TU datasheet

 ..1. Size:458K  fairchild semi
 fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf pdf_icon

FDU6N50TU

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

 7.1. Size:375K  fairchild semi
 fdu6n50f.pdf pdf_icon

FDU6N50TU

January 2012 UniFET TM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology h

 7.2. Size:851K  fairchild semi
 fdd6n50 fdu6n50.pdf pdf_icon

FDU6N50TU

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tai

 7.3. Size:648K  fairchild semi
 fdd6n50f fdu6n50f.pdf pdf_icon

FDU6N50TU

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has

MOSTRAR MÁS

Otros transistores... FDU6030BL, FDU6296, FDU6512A, FDU6612A, FDU6676AS, FDU6680, FDU6688, FDU6N50F, K4145, FDU7030BL, FDU8580, FDU8586, FDU8770, FDU8770F071, FDU8778, FDU8780, FDU8780F071