Справочник MOSFET. FDU6N50TU

 

FDU6N50TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDU6N50TU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 89 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12.8 nC
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: I-PAK

 Аналог (замена) для FDU6N50TU

 

 

FDU6N50TU Datasheet (PDF)

 ..1. Size:458K  fairchild semi
 fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf

FDU6N50TU FDU6N50TU

November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

 7.1. Size:375K  fairchild semi
 fdu6n50f.pdf

FDU6N50TU FDU6N50TU

January 2012UniFET TMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology h

 7.2. Size:851K  fairchild semi
 fdd6n50 fdu6n50.pdf

FDU6N50TU FDU6N50TU

January 2006TMUniFETFDD6N50/FDU6N50 500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tai

 7.3. Size:648K  fairchild semi
 fdd6n50f fdu6n50f.pdf

FDU6N50TU FDU6N50TU

July 2007UniFETTMFDD6N50F / FDU6N50FtmN-Channel MOSFET 500V, 5.5A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low gate charge ( Typ. 15nC)stripe, DMOS technology. Low Crss ( Typ. 6.3pF)This advance technology has

 7.4. Size:928K  onsemi
 fdd6n50 fdu6n50.pdf

FDU6N50TU FDU6N50TU

FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mDescriptionFeatures RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 AUniFETTM MOSFET is ON Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF)provide bet

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top