FDU8778 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDU8778

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO-251AA

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FDU8778 datasheet

 ..1. Size:356K  fairchild semi
 fdu8778.pdf pdf_icon

FDU8778

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has

 ..2. Size:358K  fairchild semi
 fdd8778 fdu8778.pdf pdf_icon

FDU8778

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has

 8.1. Size:308K  fairchild semi
 fdu8770 fdu8770 f071.pdf pdf_icon

FDU8778

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee

 8.2. Size:310K  fairchild semi
 fdd8770 fdu8770.pdf pdf_icon

FDU8778

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee

MOSTRAR MÁS

Otros transistores... FDU6688, FDU6N50F, FDU6N50TU, FDU7030BL, FDU8580, FDU8586, FDU8770, FDU8770F071, IRFB3607, FDU8780, FDU8780F071, FDU8782, FDU8796, FDU8796F071, FDU8870, FDU8874, FDU8876