FDU8778 Specs and Replacement

Type Designator: FDU8778

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-251AA

FDU8778 substitution

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FDU8778 datasheet

 ..1. Size:356K  fairchild semi
fdu8778.pdf pdf_icon

FDU8778

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has ... See More ⇒

 ..2. Size:358K  fairchild semi
fdd8778 fdu8778.pdf pdf_icon

FDU8778

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has ... See More ⇒

 8.1. Size:308K  fairchild semi
fdu8770 fdu8770 f071.pdf pdf_icon

FDU8778

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee... See More ⇒

 8.2. Size:310K  fairchild semi
fdd8770 fdu8770.pdf pdf_icon

FDU8778

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee... See More ⇒

Detailed specifications: FDU6688, FDU6N50F, FDU6N50TU, FDU7030BL, FDU8580, FDU8586, FDU8770, FDU8770F071, IRFB3607, FDU8780, FDU8780F071, FDU8782, FDU8796, FDU8796F071, FDU8870, FDU8874, FDU8876

Keywords - FDU8778 MOSFET specs

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