All MOSFET. FDU8778 Datasheet

 

FDU8778 Datasheet and Replacement


   Type Designator: FDU8778
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-251AA
 

 FDU8778 substitution

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FDU8778 Datasheet (PDF)

 ..1. Size:356K  fairchild semi
 fdu8778.pdf pdf_icon

FDU8778

May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has

 ..2. Size:358K  fairchild semi
 fdd8778 fdu8778.pdf pdf_icon

FDU8778

May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has

 8.1. Size:308K  fairchild semi
 fdu8770 fdu8770 f071.pdf pdf_icon

FDU8778

March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee

 8.2. Size:310K  fairchild semi
 fdd8770 fdu8770.pdf pdf_icon

FDU8778

March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee

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Datasheet: FDU6688 , FDU6N50F , FDU6N50TU , FDU7030BL , FDU8580 , FDU8586 , FDU8770 , FDU8770F071 , IRFB3607 , FDU8780 , FDU8780F071 , FDU8782 , FDU8796 , FDU8796F071 , FDU8870 , FDU8874 , FDU8876 .

History: IPA60R230P6 | PKEA6EB | AONY36306 | IPA60R190P6 | AONY36354 | SPP11N60S5 | IPA60R280P6

Keywords - FDU8778 MOSFET datasheet

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