FDU8782 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDU8782
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO-251AA

Búsqueda de reemplazo de MOSFET FDU8782

FDU8782 Datasheet (PDF)

..1. Size:395K fairchild semi
fdu8782.pdf

November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

..2. Size:418K fairchild semi
fdd8782 fdu8782.pdf

8.1. Size:312K fairchild semi
fdu8780 fdu8780 f071.pdf

March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

8.2. Size:314K fairchild semi
fdd8780 fdu8780.pdf

9.1. Size:356K fairchild semi
fdu8778.pdf

May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has

9.2. Size:306K fairchild semi
fdu8796 fdu8796 f071.pdf

March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

9.3. Size:308K fairchild semi
fdd8796 fdu8796.pdf

9.4. Size:308K fairchild semi
fdu8770 fdu8770 f071.pdf

March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee

9.5. Size:310K fairchild semi
fdd8770 fdu8770.pdf