IRFR024 Todos los transistores

 

IRFR024 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR024

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 25(max) nC

Tiempo de elevación (tr): 58 nS

Conductancia de drenaje-sustrato (Cd): 360 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO252

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IRFR024 Datasheet (PDF)

0.1. irfr024n.pdf Size:178K _international_rectifier

IRFR024
IRFR024

PD- 9.1336AIRFR/U024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process TechnologyRDS(on) = 0.075G Fast Switching Fully Avalanche RatedID = 17A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi

0.2. irfr024.pdf Size:172K _international_rectifier

IRFR024
IRFR024

 0.3. irfr024pbf irfu024pbf.pdf Size:1456K _international_rectifier

IRFR024
IRFR024

PD- 95236AIRFR024PbFIRFU024PbF Lead-FreeAbsolute Maximum Ratings12/03/04Document Number: 91264 www.vishay.com1IRFR/U024PbFDocument Number: 91264 www.vishay.com2IRFR/U024PbFDocument Number: 91264 www.vishay.com3IRFR/U024PbFDocument Number: 91264 www.vishay.com4IRFR/U024PbFDocument Number: 91264 www.vishay.com5IRFR/U024PbFDocument Number: 91264 ww

0.4. irfr024npbf irfu024npbf.pdf Size:400K _international_rectifier

IRFR024
IRFR024

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform

 0.5. irfr024a.pdf Size:495K _samsung

IRFR024
IRFR024

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

0.6. irfr024 irfu024 sihfr024 sihfu024.pdf Size:1159K _vishay

IRFR024
IRFR024

IRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024)Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024)Qgs (nC) 5.8 Available in Tape and Reel Fast SwitchingQgd (nC) 11

0.7. irfr024pbf irfu024 irfu024pbf sihfr024 sihfu024.pdf Size:1050K _vishay

IRFR024
IRFR024

IRFR024, IRFU024, SiHFR024, SiHFU024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Surface Mount (IRFR024, SiHFR024)RDS(on) ()VGS = 10 V 0.10 Straight Lead (IRFU024, SiHFU024) Available in Tape and ReelQg (Max.) (nC) 25 Fast SwitchingQgs (nC) 5.8 Ease of ParallelingQgd (nC) 11 Simple Driv

0.8. auirfr024n auirfu024n.pdf Size:483K _infineon

IRFR024
IRFR024

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

0.9. irfr024npbf irfu024npbf.pdf Size:400K _infineon

IRFR024
IRFR024

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform

0.10. irfr024npbf.pdf Size:240K _inchange_semiconductor

IRFR024
IRFR024

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRFR024NPBFFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)@V =10VDS(on) GSHigh density cell design for ultra low RdsonFully characterized avalanche voltage and currentMinimum Lot-to-Lot variations for robust deviceperform

0.11. irfr024n.pdf Size:241K _inchange_semiconductor

IRFR024
IRFR024

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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