IRFR024 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 95236AIRFR024PbFIRFU024PbF Lead-FreeAbsolute Maximum Ratings12/03/04Document Number: 91264 www.vishay.com1IRFR/U024PbFDocument Number: 91264 www.vishay.com2IRFR/U024PbFDocument Number: 91264 www.vishay.com3IRFR/U024PbFDocument Number: 91264 www.vishay.com4IRFR/U024PbFDocument Number: 91264 www.vishay.com5IRFR/U024PbFDocument Number: 91264 ww

IRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024)Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024)Qgs (nC) 5.8 Available in Tape and Reel Fast SwitchingQgd (nC) 11

IRFR024, IRFU024, SiHFR024, SiHFU024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Surface Mount (IRFR024, SiHFR024)RDS(on) ()VGS = 10 V 0.10 Straight Lead (IRFU024, SiHFU024) Available in Tape and ReelQg (Max.) (nC) 25 Fast SwitchingQgs (nC) 5.8 Ease of ParallelingQgd (nC) 11 Simple Driv

PD- 9.1336AIRFR/U024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process TechnologyRDS(on) = 0.075G Fast Switching Fully Avalanche RatedID = 17A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S

PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform

IRFR024NTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mot

isc N-Channel MOSFET Transistor IRFR024N, IIRFR024NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRFR024NPBFFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)@V =10VDS(on) GSHigh density cell design for ultra low RdsonFully characterized avalanche voltage and currentMinimum Lot-to-Lot variations for robust deviceperform