IRFR024
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR024
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25(max)
nC
trⓘ - Rise Time: 58
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO252
IRFR024
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR024
Datasheet (PDF)
..2. Size:1456K international rectifier
irfr024pbf irfu024pbf.pdf
PD- 95236AIRFR024PbFIRFU024PbF Lead-FreeAbsolute Maximum Ratings12/03/04Document Number: 91264 www.vishay.com1IRFR/U024PbFDocument Number: 91264 www.vishay.com2IRFR/U024PbFDocument Number: 91264 www.vishay.com3IRFR/U024PbFDocument Number: 91264 www.vishay.com4IRFR/U024PbFDocument Number: 91264 www.vishay.com5IRFR/U024PbFDocument Number: 91264 ww
..4. Size:1159K vishay
irfr024 irfu024 sihfr024 sihfu024.pdf
IRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFR024, SiHFR024)Qg (Max.) (nC) 25 Straight Lead (IRFU024, SiHFU024)Qgs (nC) 5.8 Available in Tape and Reel Fast SwitchingQgd (nC) 11
..5. Size:1050K vishay
irfr024pbf irfu024 irfu024pbf sihfr024 sihfu024.pdf
IRFR024, IRFU024, SiHFR024, SiHFU024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Surface Mount (IRFR024, SiHFR024)RDS(on) ()VGS = 10 V 0.10 Straight Lead (IRFU024, SiHFU024) Available in Tape and ReelQg (Max.) (nC) 25 Fast SwitchingQgs (nC) 5.8 Ease of ParallelingQgd (nC) 11 Simple Driv
0.2. Size:178K international rectifier
irfr024n.pdf
PD- 9.1336AIRFR/U024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR024N) VDSS = 55V Straight Lead (IRFU024N) Advanced Process TechnologyRDS(on) = 0.075G Fast Switching Fully Avalanche RatedID = 17A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possi
0.3. Size:400K international rectifier
irfr024npbf irfu024npbf.pdf
PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform
0.4. Size:495K samsung
irfr024a.pdf
Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte
0.5. Size:483K infineon
auirfr024n auirfu024n.pdf
AUIRFR024N AUTOMOTIVE GRADE AUIRFU024N Features VDSS 55V Advanced Planar Technology Low On-Resistance RDS(on) max. 0.075 Dynamic dv/dt Rating ID 17A 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S
0.6. Size:400K infineon
irfr024npbf irfu024npbf.pdf
PD - 95066AIRFR024NPbFIRFU024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U024NPbF2 www.irf.comIRFR/U024NPbFwww.irf.com 3IRFR/U024NPbF4 www.irf.comIRFR/U024NPbFwww.irf.com 5IRFR/U024NPbF6 www.irf.comIRFR/U024NPbFwww.irf.com 7IRFR/U024NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Inform
0.7. Size:844K cn vbsemi
irfr024ntr.pdf
IRFR024NTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mot
0.8. Size:241K inchange semiconductor
irfr024n.pdf
isc N-Channel MOSFET Transistor IRFR024N, IIRFR024NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
0.9. Size:240K inchange semiconductor
irfr024npbf.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRFR024NPBFFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max)@V =10VDS(on) GSHigh density cell design for ultra low RdsonFully characterized avalanche voltage and currentMinimum Lot-to-Lot variations for robust deviceperform
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