FDV301ND87Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDV301ND87Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 6 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: SOT-23
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FDV301ND87Z Datasheet (PDF)
fdv301n d87z fdv301n nb9v005.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-
fdv301n.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-
fdv301n.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-
fdv301n.pdf

N-Channel MOSFETFDV301NSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11. Gate2. Source3. Drain0.4+0.1+0.12.4-0.11.3-0.10.55+0.10.97-0.1+0.10-0.10.38-0.1N-Channel MOSFETFDV301N MarkingMarking 301SMD Type MOSFETN-Channel MOSFETFDV301N Typical Characterisitics1.40.5V GS = 4
Otros transistores... FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , FDU8896 , P0903BDG , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P .
History: SSF2816E | VP3203N3 | AP6N1R7CDT | AP4501AGEM-HF | SPI21N50C3 | NVDD5894NL | GP2M007A065XG
History: SSF2816E | VP3203N3 | AP6N1R7CDT | AP4501AGEM-HF | SPI21N50C3 | NVDD5894NL | GP2M007A065XG



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