FDV301ND87Z Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDV301ND87Z
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.22 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4 Ohm
Тип корпуса: SOT-23
Аналог (замена) для FDV301ND87Z
FDV301ND87Z Datasheet (PDF)
fdv301n d87z fdv301n nb9v005.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-
fdv301n.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-
fdv301n.pdf

June 2009 FDV301N Digital FET , N-Channel General Description Features25 V, 0.22 A continuous, 0.5 A Peak.This N-Channel logic level enhancement mode field effectRDS(ON) = 5 @ VGS= 2.7 Vtransistor is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isRDS(ON) = 4 @ VGS= 4.5 V.especially tailored to minimize on-
fdv301n.pdf

N-Channel MOSFETFDV301NSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.131 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11. Gate2. Source3. Drain0.4+0.1+0.12.4-0.11.3-0.10.55+0.10.97-0.1+0.10-0.10.38-0.1N-Channel MOSFETFDV301N MarkingMarking 301SMD Type MOSFETN-Channel MOSFETFDV301N Typical Characterisitics1.40.5V GS = 4
Другие MOSFET... FDU8796F071 , FDU8870 , FDU8874 , FDU8876 , FDU8878 , FDU8880 , FDU8882 , FDU8896 , P0903BDG , FDV301NNB9V005 , FDV302PD87Z , FDV302PNB8V001 , FDV303NNB9U008 , FDV304PD87Z , FDV304PNB8U003 , FDW252P , FDW254P .
History: MMBFJ111 | CMPDM7002AE | STP30NF20
History: MMBFJ111 | CMPDM7002AE | STP30NF20



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