FDZ204P Todos los transistores

 

FDZ204P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDZ204P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 258 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SSOT-6
     - Selección de transistores por parámetros

 

FDZ204P Datasheet (PDF)

 ..1. Size:166K  fairchild semi
fdz204p.pdf pdf_icon

FDZ204P

January 2004 FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ204P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

 9.1. Size:217K  fairchild semi
fdz206p.pdf pdf_icon

FDZ204P

February 2006 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 13 A, 20 V. rDS(on) = 9.5 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 14.5 m @ VGS = 2.5 V packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA M

 9.2. Size:193K  fairchild semi
fdz208p.pdf pdf_icon

FDZ204P

February 2006 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 30 Volt P-Channel 12.5 A, 30 V. rDS(on) = 10.5 m @ VGS = 10 V Trench II Process with 25 Volts Vgs. Abs. Max Gate rDS(on) = 16.5 m @ VGS = 4.5 V Rating for the ultimate low rDS(on) Battery Protection MOSFET. Th

 9.3. Size:167K  fairchild semi
fdz202p.pdf pdf_icon

FDZ204P

January 2004 FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 5.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KI2325DS | RSD046P05FRA | CS6N120P

 

 
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