IRFR110 Datasheet. Equivalente

 ..1. Size:282K  1
 irfr110 irfu110.pdf

 ..2. Size:172K  international rectifier
 irfr110.pdf

 ..3. Size:1868K  international rectifier
 irfr110pbf irfu110pbf.pdf

PD - 95026A IRFR110PbF IRFU110PbF Lead-Free 12/14/04 Document Number 91265 www.vishay.com 1 IRFR/U110PbF Document Number 91265 www.vishay.com 2 IRFR/U110PbF Document Number 91265 www.vishay.com 3 IRFR/U110PbF Document Number 91265 www.vishay.com 4 IRFR/U110PbF Document Number 91265 www.vishay.com 5 IRFR/U110PbF Document Number 91265 www.vishay.com 6 IRFR/U1

 ..4. Size:1455K  vishay
 irfr110 sihfr110.pdf

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single

 ..5. Size:1479K  vishay
 irfr110pbf sihfr110.pdf

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single

 0.1. Size:255K  fairchild semi
 irfr110a irfu110a.pdf

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxim

 0.2. Size:496K  samsung
 irfr110a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 0.3. Size:862K  cn vbsemi
 irfr110tr.pdf

IRFR110TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS