IRFR110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 8.3 nC

Resistencia drenaje-fuente RDS(on): 0.54 Ohm

Empaquetado / Estuche: TO252AA

Búsqueda de reemplazo de MOSFET IRFR110

IRFR110 Datasheet (PDF)

1.1. irfr110pbf.pdf Size:1479K _upd

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

1.2. irfr110a irfu110a.pdf Size:255K _fairchild_semi

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK � Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratin

1.3. irfr110pbf irfu110pbf.pdf Size:1868K _international_rectifier

PD - 95026A IRFR110PbF IRFU110PbF � Lead-Free 12/14/04 Document Number: 91265 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4 IRFR/U110PbF Document Number: 91265 www.vishay.com 5 IRFR/U110PbF Document Number: 91265 www.vishay.com 6 IRFR/U110PbF

1.4. irfr110.pdf Size:172K _international_rectifier

1.5. irfr110a.pdf Size:496K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.6. irfr110 sihfr110.pdf Size:1455K _vishay

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition � Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.54 � Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 � Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 � Available in Tape and Reel Qgd (nC) 3.8 � Fast Switching Configuration Single � Ease of Parall

Otros transistores... IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRFR024N , IRFR025 , IRF630 , IRFR110A , IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 , IRFR130A .

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