All MOSFET. IRFR110 Datasheet

 

IRFR110 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR110

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm

Package: TO252AA

IRFR110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR110 Datasheet (PDF)

1.1. irfr110pbf.pdf Size:1479K _upd

IRFR110
IRFR110

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 • Available in Tape and Reel Qgd (nC) 3.8 • Fast Switching Configuration Single

1.2. irfr110a irfu110a.pdf Size:255K _fairchild_semi

IRFR110
IRFR110

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratin

 1.3. irfr110pbf irfu110pbf.pdf Size:1868K _international_rectifier

IRFR110
IRFR110

PD - 95026A IRFR110PbF IRFU110PbF Lead-Free 12/14/04 Document Number: 91265 www.vishay.com 1 IRFR/U110PbF Document Number: 91265 www.vishay.com 2 IRFR/U110PbF Document Number: 91265 www.vishay.com 3 IRFR/U110PbF Document Number: 91265 www.vishay.com 4 IRFR/U110PbF Document Number: 91265 www.vishay.com 5 IRFR/U110PbF Document Number: 91265 www.vishay.com 6 IRFR/U110PbF

1.4. irfr110.pdf Size:172K _international_rectifier

IRFR110
IRFR110

 1.5. irfr110a.pdf Size:496K _samsung

IRFR110
IRFR110

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.6. irfr110 sihfr110.pdf Size:1455K _vishay

IRFR110
IRFR110

IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Parall

Datasheet: IRFR014A , IRFR015 , IRFR020 , IRFR022 , IRFR024 , IRFR024A , IRFR024N , IRFR025 , IRF630 , IRFR110A , IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 , IRFR130A .

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