ZVN0540ASTOB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN0540ASTOB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.7 W
Voltaje máximo drenador - fuente |Vds|: 400 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.09 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 10 pF
Resistencia entre drenaje y fuente RDS(on): 50 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET ZVN0540ASTOB
ZVN0540ASTOB Datasheet (PDF)
zvn0540astoa zvn0540astob zvn0540astz.pdf
N-CHANNEL ENHANCEMENTZVN0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V
zvn0540a.pdf
N-CHANNEL ENHANCEMENTZVN0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V
zvn0545gta zvn0545gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN0545GMODE VERTICAL DMOS FETISSUE 3 - DECEMBER 1995 FEATURES* 450 Volts VDSD* RDS(on)= 50* Ease of parallelingSDPARTMARKING DETAIL ZVN0545GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 140 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS
zvn0545astob zvn0545astz.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
zvn0545g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN0545GMODE VERTICAL DMOS FETISSUE 3 - DECEMBER 1995 FEATURES* 450 Volts VDSD* RDS(on)= 50* Ease of parallelingSDPARTMARKING DETAIL ZVN0545GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 140 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS
zvn0545a.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
zvn0545astoa zvn0545astob.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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