IRFP9140NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP9140NPBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 67 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
Paquete / Cubierta: TO-247AC
Búsqueda de reemplazo de IRFP9140NPBF MOSFET
IRFP9140NPBF Datasheet (PDF)
irfp9140npbf.pdf
PD - 95665IRFP9140NPbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = -100Vl P-Channell Fast SwitchingRDS(on) = 0.117l Fully Avalanche RatedGl Lead-FreeID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-re
irfp9140n.pdf
PD - 9.1492AIRFP9140NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature P-ChannelRDS(on) = 0.117 Fast SwitchingG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistanc
irfp9140n.pdf
isc P-Channel MOSFET Transistor IRFP9140NIIRFP9140NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and
Otros transistores... ZVN0124ASTOA , ZVN0124ASTOB , ZVN0124ASTZ , ZVN0540ASTOA , ZVN0540ASTOB , ZVN0540ASTZ , ZVN0545ASTOA , IRFP90N20DPBF , IRF540 , IRFP9140PBF , IRFP9240PBF , IRFPC32 , IRFPC40PBF , IRFPC40R , IRFPC42 , IRFPC42R , IRFPC50APBF .
History: FQPF5N50CT | IPB60R099C7
History: FQPF5N50CT | IPB60R099C7
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM60P20R | AGM60P20D | AGM60P20AP | AGM60P14D | AGM60P14AP | AGM60P14A | AGM60P100A | AGM60P06S | AGM609S | AGM609MNA | AGM609F | AGM609D | AGM609C | AGM609AP | AGM40P26S | AGM40P26E
Popular searches
mn2488 datasheet | c2026 transistor | 2n3903 transistor | 2n4360 | 2n2613 | c2166 transistor | 2sd330 | 20n60

