IRFP9140NPBF Datasheet. Specs and Replacement
Type Designator: IRFP9140NPBF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: TO-247AC
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IRFP9140NPBF substitution
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IRFP9140NPBF datasheet
irfp9140npbf.pdf
PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re... See More ⇒
irfp9140n.pdf
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒
irfp9140n.pdf
isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and ... See More ⇒
Detailed specifications: ZVN0124ASTOA, ZVN0124ASTOB, ZVN0124ASTZ, ZVN0540ASTOA, ZVN0540ASTOB, ZVN0540ASTZ, ZVN0545ASTOA, IRFP90N20DPBF, IRF540, IRFP9140PBF, IRFP9240PBF, IRFPC32, IRFPC40PBF, IRFPC40R, IRFPC42, IRFPC42R, IRFPC50APBF
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