IRFP9140NPBF Specs and Replacement
Type Designator: IRFP9140NPBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 97 nC
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: TO-247AC
IRFP9140NPBF substitution
IRFP9140NPBF Specs
irfp9140npbf.pdf
PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re... See More ⇒
irfp9140n.pdf
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc... See More ⇒
irfp9140n.pdf
isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and ... See More ⇒
Detailed specifications: ZVN0124ASTOA , ZVN0124ASTOB , ZVN0124ASTZ , ZVN0540ASTOA , ZVN0540ASTOB , ZVN0540ASTZ , ZVN0545ASTOA , IRFP90N20DPBF , IRF540 , IRFP9140PBF , IRFP9240PBF , IRFPC32 , IRFPC40PBF , IRFPC40R , IRFPC42 , IRFPC42R , IRFPC50APBF .
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