IRFPC32 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFPC32
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Paquete / Cubierta: TO-247AC

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IRFPC32 Datasheet (PDF)

..1. Size:123K international rectifier
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf pdf_icon

8.1. Size:167K international rectifier
irfpc30.pdf pdf_icon

9.1. Size:162K international rectifier
irfpc60.pdf pdf_icon

9.2. Size:2059K international rectifier
irfpc40pbf.pdf pdf_icon

PD - 94933IRFPC40PbF Lead-Free1/8/04Document Number: 91240 www.vishay.com1IRFPC40PbFDocument Number: 91240 www.vishay.com2IRFPC40PbFDocument Number: 91240 www.vishay.com3IRFPC40PbFDocument Number: 91240 www.vishay.com4IRFPC40PbFDocument Number: 91240 www.vishay.com5IRFPC40PbFDocument Number: 91240 www.vishay.com6IRFPC40PbFTO-247AC Package Out

9.3. Size:168K international rectifier
irfpc40.pdf pdf_icon

9.4. Size:154K international rectifier
irfpc50lc.pdf pdf_icon

PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

9.5. Size:107K international rectifier
irfpc60lc-p.pdf pdf_icon

PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0.40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16AS Repetitive Avalanche RatedDescriptionThis new series of Surface Mountable Low Charge HEXFET Power MOSFETsachieve significantly

9.6. Size:164K international rectifier
irfpc50.pdf pdf_icon

9.7. Size:489K international rectifier
irfpc40 irfpc42.pdf pdf_icon

9.8. Size:1142K international rectifier
irfpc60lcpbf.pdf pdf_icon

PD - 94878IRFPC60LCPbF Lead-Free12/9/03Document Number: 91244 www.vishay.com1IRFPC60LCPbFDocument Number: 91244 www.vishay.com2IRFPC60LCPbFDocument Number: 91244 www.vishay.com3IRFPC60LCPbFDocument Number: 91244 www.vishay.com4IRFPC60LCPbFDocument Number: 91244 www.vishay.com5IRFPC60LCPbFDocument Number: 91244 www.vishay.com6IRFPC60LCPbFDocum

9.9. Size:1924K international rectifier
irfpc50pbf.pdf pdf_icon

PD - 94934IRFPC50PbF Lead-Free1/8/04Document Number: 91243 www.vishay.com1IRFPC50PbFDocument Number: 91243 www.vishay.com2IRFPC50PbFDocument Number: 91243 www.vishay.com3IRFPC50PbFDocument Number: 91243 www.vishay.com4IRFPC50PbFDocument Number: 91243 www.vishay.com5IRFPC50PbFDocument Number: 91243 www.vishay.com6IRFPC50PbFTO-247AC Package Out

9.10. Size:214K international rectifier
irfpc48.pdf pdf_icon

9.11. Size:159K international rectifier
irfpc60lc.pdf pdf_icon

PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

9.12. Size:95K international rectifier
irfpc50a.pdf pdf_icon

PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

9.13. Size:1471K vishay
irfpc40 sihfpc40.pdf pdf_icon

IRFPC40, SiHFPC40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS*COMPLIANT Isolated Central Mounting HoleQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (P

9.14. Size:590K vishay
irfpc50lcpbf.pdf pdf_icon

IRFPC50LC, SiHFPC50LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitiv

9.15. Size:1478K vishay
irfpc40pbf.pdf pdf_icon

9.16. Size:1457K vishay
irfpc50 sihfpc50.pdf pdf_icon

IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia

9.17. Size:2429K vishay
irfpc60pbf sihfpc60.pdf pdf_icon

IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl

9.18. Size:597K vishay
irfpc50lc sihfpc50lc.pdf pdf_icon

IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive

9.19. Size:895K vishay
irfpc50apbf.pdf pdf_icon

IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur

9.20. Size:2423K vishay
irfpc60 sihfpc60.pdf pdf_icon

9.21. Size:889K vishay
irfpc50a sihfpc50a.pdf pdf_icon

9.22. Size:653K vishay
irfpc60lc sihfpc60lc.pdf pdf_icon

IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive

9.23. Size:1494K infineon
irfpc40 sihfpc40.pdf pdf_icon

IRFPC40, SiHFPC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole COMPLIANTQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant

9.24. Size:1461K infineon
irfpc50 sihfpc50.pdf pdf_icon

9.25. Size:62K inchange semiconductor
irfpc42r.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC42R FEATURES Drain Current ID= 5.9A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.6(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

9.26. Size:62K inchange semiconductor
irfpc40r.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC40R FEATURES Drain Current ID= 6.8A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.2(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

9.27. Size:400K inchange semiconductor
irfpc60lc.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFPC60LCFEATURESLow drain-source on-resistance:RDS(ON) 0.4 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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