IRFPC32 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFPC32
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
Тип корпуса: TO-247AC
IRFPC32 Datasheet (PDF)
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf
irfpc40pbf.pdf
PD - 94933IRFPC40PbF Lead-Free1/8/04Document Number: 91240 www.vishay.com1IRFPC40PbFDocument Number: 91240 www.vishay.com2IRFPC40PbFDocument Number: 91240 www.vishay.com3IRFPC40PbFDocument Number: 91240 www.vishay.com4IRFPC40PbFDocument Number: 91240 www.vishay.com5IRFPC40PbFDocument Number: 91240 www.vishay.com6IRFPC40PbFTO-247AC Package Out
irfpc50lc.pdf
PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfpc60lc-p.pdf
PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0.40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16AS Repetitive Avalanche RatedDescriptionThis new series of Surface Mountable Low Charge HEXFET Power MOSFETsachieve significantly
irfpc60lcpbf.pdf
PD - 94878IRFPC60LCPbF Lead-Free12/9/03Document Number: 91244 www.vishay.com1IRFPC60LCPbFDocument Number: 91244 www.vishay.com2IRFPC60LCPbFDocument Number: 91244 www.vishay.com3IRFPC60LCPbFDocument Number: 91244 www.vishay.com4IRFPC60LCPbFDocument Number: 91244 www.vishay.com5IRFPC60LCPbFDocument Number: 91244 www.vishay.com6IRFPC60LCPbFDocum
irfpc50pbf.pdf
PD - 94934IRFPC50PbF Lead-Free1/8/04Document Number: 91243 www.vishay.com1IRFPC50PbFDocument Number: 91243 www.vishay.com2IRFPC50PbFDocument Number: 91243 www.vishay.com3IRFPC50PbFDocument Number: 91243 www.vishay.com4IRFPC50PbFDocument Number: 91243 www.vishay.com5IRFPC50PbFDocument Number: 91243 www.vishay.com6IRFPC50PbFTO-247AC Package Out
irfpc60lc.pdf
PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
irfpc50a.pdf
PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
irfpc40 sihfpc40.pdf
IRFPC40, SiHFPC40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS*COMPLIANT Isolated Central Mounting HoleQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (P
irfpc50lcpbf.pdf
IRFPC50LC, SiHFPC50LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitiv
irfpc40pbf.pdf
IRFPC40, SiHFPC40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS*COMPLIANT Isolated Central Mounting HoleQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (P
irfpc50 sihfpc50.pdf
IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia
irfpc60pbf sihfpc60.pdf
IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl
irfpc50lc sihfpc50lc.pdf
IRFPC50LC, SiHFPC50LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.60 Enhanced 30 V VGS RatingRoHS* Reduced Ciss, Coss, CrssCOMPLIANTQg (Max.) (nC) 84 Isolated Central Mounting HoleQgs (nC) 18 Dynamic dV/dt RatingQgd (nC) 36 Repetitive
irfpc50apbf.pdf
IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur
irfpc60 sihfpc60.pdf
IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl
irfpc50a sihfpc50a.pdf
IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur
irfpc60lc sihfpc60lc.pdf
IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive
irfpc40 sihfpc40.pdf
IRFPC40, SiHFPC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole COMPLIANTQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant
irfpc50 sihfpc50.pdf
IRFPC50, SiHFPC50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.60RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 140 COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 69 Simple Drive RequirementsConfiguration Single Complia
irfpc42r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC42R FEATURES Drain Current ID= 5.9A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.6(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfpc40r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC40R FEATURES Drain Current ID= 6.8A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.2(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT
irfpc60lc.pdf
iscN-Channel MOSFET Transistor IRFPC60LCFEATURESLow drain-source on-resistance:RDS(ON) 0.4 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918