IRFPC50APBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPC50APBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm

Encapsulados: TO-247

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IRFPC50APBF datasheet

 ..1. Size:895K  vishay
irfpc50apbf.pdf pdf_icon

IRFPC50APBF

IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configur

 6.1. Size:95K  international rectifier
irfpc50a.pdf pdf_icon

IRFPC50APBF

PD- 91898 SMPS MOSFET IRFPC50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 6.2. Size:889K  vishay
irfpc50a sihfpc50a.pdf pdf_icon

IRFPC50APBF

IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configur

 7.1. Size:154K  international rectifier
irfpc50lc.pdf pdf_icon

IRFPC50APBF

PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

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