IRFPC50APBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPC50APBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de IRFPC50APBF MOSFET
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IRFPC50APBF datasheet
irfpc50apbf.pdf
IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configur
irfpc50a.pdf
PD- 91898 SMPS MOSFET IRFPC50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current
irfpc50a sihfpc50a.pdf
IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configur
irfpc50lc.pdf
PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
Otros transistores... IRFP9140NPBF, IRFP9140PBF, IRFP9240PBF, IRFPC32, IRFPC40PBF, IRFPC40R, IRFPC42, IRFPC42R, IRF640N, IRFPC50LCPBF, IRFPC50PBF, IRFPC60LCPBF, IRFPC60PBF, IRFPE20, IRFPE22, IRFPE30PBF, IRFPE32
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