IRFPC50APBF - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRFPC50APBF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 270 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
Тип корпуса: TO-247
Аналог (замена) для IRFPC50APBF
IRFPC50APBF Datasheet (PDF)
irfpc50apbf.pdf
IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur
irfpc50a.pdf
PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58 11A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
irfpc50a sihfpc50a.pdf
IRFPC50A, SiHFPC50AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.58RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 70RuggednessQgs (nC) 19 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 28 and CurrentConfigur
irfpc50lc.pdf
PD - 9.1233IRFPC50LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 600VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.60Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 11ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
Другие MOSFET... IRFP9140NPBF , IRFP9140PBF , IRFP9240PBF , IRFPC32 , IRFPC40PBF , IRFPC40R , IRFPC42 , IRFPC42R , IRF640N , IRFPC50LCPBF , IRFPC50PBF , IRFPC60LCPBF , IRFPC60PBF , IRFPE20 , IRFPE22 , IRFPE30PBF , IRFPE32 .
History: APT5010LVR | STB36NM60ND | IPB123N10N3G | FQD30N06TF | BLP023N10-BA | BLP04N10-P | FQPF5N80
History: APT5010LVR | STB36NM60ND | IPB123N10N3G | FQD30N06TF | BLP023N10-BA | BLP04N10-P | FQPF5N80
Список транзисторов
Обновления
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