IRFPC60LCPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPC60LCPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO-247AC

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IRFPC60LCPBF datasheet

 ..1. Size:1142K  international rectifier
 irfpc60lcpbf.pdf pdf_icon

IRFPC60LCPBF

PD - 94878 IRFPC60LCPbF Lead-Free 12/9/03 Document Number 91244 www.vishay.com 1 IRFPC60LCPbF Document Number 91244 www.vishay.com 2 IRFPC60LCPbF Document Number 91244 www.vishay.com 3 IRFPC60LCPbF Document Number 91244 www.vishay.com 4 IRFPC60LCPbF Document Number 91244 www.vishay.com 5 IRFPC60LCPbF Document Number 91244 www.vishay.com 6 IRFPC60LCPbF Docum

 5.1. Size:107K  international rectifier
 irfpc60lc-p.pdf pdf_icon

IRFPC60LCPBF

PD - 99438 IRFPC60LC-P HEXFET Power MOSFET D Ultra Low Gate Charge VDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs Rating RDS(on) = 0.40 Reduced Ciss, Coss, Crss G Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16A S Repetitive Avalanche Rated Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly

 5.2. Size:159K  international rectifier
 irfpc60lc.pdf pdf_icon

IRFPC60LCPBF

PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 600V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.40 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 5.3. Size:653K  vishay
 irfpc60lc sihfpc60lc.pdf pdf_icon

IRFPC60LCPBF

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 120 Isolated Central Mounting Hole Qgs (nC) 29 Dynamic dV/dt Rated Qgd (nC) 48 Repetitive

MOSTRAR MÁS

Otros transistores... IRFPC32, IRFPC40PBF, IRFPC40R, IRFPC42, IRFPC42R, IRFPC50APBF, IRFPC50LCPBF, IRFPC50PBF, IRFB4227, IRFPC60PBF, IRFPE20, IRFPE22, IRFPE30PBF, IRFPE32, IRFPE40PBF, IRFPE42, IRFPE50PBF