Справочник MOSFET. IRFPC60LCPBF

 

IRFPC60LCPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFPC60LCPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 280 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 120 nC
   trⓘ - Время нарастания: 57 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO-247AC

 Аналог (замена) для IRFPC60LCPBF

 

 

IRFPC60LCPBF Datasheet (PDF)

 ..1. Size:1142K  international rectifier
 irfpc60lcpbf.pdf

IRFPC60LCPBF IRFPC60LCPBF

PD - 94878IRFPC60LCPbF Lead-Free12/9/03Document Number: 91244 www.vishay.com1IRFPC60LCPbFDocument Number: 91244 www.vishay.com2IRFPC60LCPbFDocument Number: 91244 www.vishay.com3IRFPC60LCPbFDocument Number: 91244 www.vishay.com4IRFPC60LCPbFDocument Number: 91244 www.vishay.com5IRFPC60LCPbFDocument Number: 91244 www.vishay.com6IRFPC60LCPbFDocum

 5.1. Size:107K  international rectifier
 irfpc60lc-p.pdf

IRFPC60LCPBF IRFPC60LCPBF

PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0.40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16AS Repetitive Avalanche RatedDescriptionThis new series of Surface Mountable Low Charge HEXFET Power MOSFETsachieve significantly

 5.2. Size:159K  international rectifier
 irfpc60lc.pdf

IRFPC60LCPBF IRFPC60LCPBF

PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

 5.3. Size:653K  vishay
 irfpc60lc sihfpc60lc.pdf

IRFPC60LCPBF IRFPC60LCPBF

IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive

 5.4. Size:400K  inchange semiconductor
 irfpc60lc.pdf

IRFPC60LCPBF IRFPC60LCPBF

iscN-Channel MOSFET Transistor IRFPC60LCFEATURESLow drain-source on-resistance:RDS(ON) 0.4 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

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