IRFPC60PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl

PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0.40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16AS Repetitive Avalanche RatedDescriptionThis new series of Surface Mountable Low Charge HEXFET Power MOSFETsachieve significantly

PD - 94878IRFPC60LCPbF Lead-Free12/9/03Document Number: 91244 www.vishay.com1IRFPC60LCPbFDocument Number: 91244 www.vishay.com2IRFPC60LCPbFDocument Number: 91244 www.vishay.com3IRFPC60LCPbFDocument Number: 91244 www.vishay.com4IRFPC60LCPbFDocument Number: 91244 www.vishay.com5IRFPC60LCPbFDocument Number: 91244 www.vishay.com6IRFPC60LCPbFDocum

PD - 9.1234IRFPC60LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 600VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.40Dynamic dv/dt RatedRepetitive Avalanche RatedID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

IRFPC60, SiHFPC60Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 26 Ease of ParallelingQgd (nC) 110 Simple Drive RequirementsConfiguration Single Compl

IRFPC60LC, SiHFPC60LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 120 Isolated Central Mounting HoleQgs (nC) 29 Dynamic dV/dt RatedQgd (nC) 48 Repetitive

iscN-Channel MOSFET Transistor IRFPC60LCFEATURESLow drain-source on-resistance:RDS(ON) 0.4 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET