IRFPC60PBF Todos los transistores

IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl

PD - 99438 IRFPC60LC-P HEXFET Power MOSFET D Ultra Low Gate Charge VDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs Rating RDS(on) = 0.40 Reduced Ciss, Coss, Crss G Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16A S Repetitive Avalanche Rated Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly

PD - 94878 IRFPC60LCPbF Lead-Free 12/9/03 Document Number 91244 www.vishay.com 1 IRFPC60LCPbF Document Number 91244 www.vishay.com 2 IRFPC60LCPbF Document Number 91244 www.vishay.com 3 IRFPC60LCPbF Document Number 91244 www.vishay.com 4 IRFPC60LCPbF Document Number 91244 www.vishay.com 5 IRFPC60LCPbF Document Number 91244 www.vishay.com 6 IRFPC60LCPbF Docum

PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 600V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.40 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 120 Isolated Central Mounting Hole Qgs (nC) 29 Dynamic dV/dt Rated Qgd (nC) 48 Repetitive

iscN-Channel MOSFET Transistor IRFPC60LC FEATURES Low drain-source on-resistance RDS(ON) 0.4 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET