IRFPC60PBF - описание и поиск аналогов

 ..1. Size:2429K  vishay
 irfpc60pbf sihfpc60.pdf 

IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl

 7.1. Size:162K  international rectifier
 irfpc60.pdf 

 7.2. Size:107K  international rectifier
 irfpc60lc-p.pdf 

PD - 99438 IRFPC60LC-P HEXFET Power MOSFET D Ultra Low Gate Charge VDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs Rating RDS(on) = 0.40 Reduced Ciss, Coss, Crss G Isolated Central Mounting Hole Dynamic dv/dt Rated ID = 16A S Repetitive Avalanche Rated Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly

 7.3. Size:1142K  international rectifier
 irfpc60lcpbf.pdf 

PD - 94878 IRFPC60LCPbF Lead-Free 12/9/03 Document Number 91244 www.vishay.com 1 IRFPC60LCPbF Document Number 91244 www.vishay.com 2 IRFPC60LCPbF Document Number 91244 www.vishay.com 3 IRFPC60LCPbF Document Number 91244 www.vishay.com 4 IRFPC60LCPbF Document Number 91244 www.vishay.com 5 IRFPC60LCPbF Document Number 91244 www.vishay.com 6 IRFPC60LCPbF Docum

 7.4. Size:159K  international rectifier
 irfpc60lc.pdf 

PD - 9.1234 IRFPC60LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 600V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.40 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 7.5. Size:2423K  vishay
 irfpc60 sihfpc60.pdf 

IRFPC60, SiHFPC60 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 26 Ease of Paralleling Qgd (nC) 110 Simple Drive Requirements Configuration Single Compl

 7.6. Size:653K  vishay
 irfpc60lc sihfpc60lc.pdf 

IRFPC60LC, SiHFPC60LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 120 Isolated Central Mounting Hole Qgs (nC) 29 Dynamic dV/dt Rated Qgd (nC) 48 Repetitive

 7.7. Size:400K  inchange semiconductor
 irfpc60lc.pdf 

iscN-Channel MOSFET Transistor IRFPC60LC FEATURES Low drain-source on-resistance RDS(ON) 0.4 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET