IRFPS37N50APBF Todos los transistores

 

IRFPS37N50APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS37N50APBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 446 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 180 nC

Tiempo de elevación (tr): 98 nS

Conductancia de drenaje-sustrato (Cd): 810 pF

Resistencia drenaje-fuente RDS(on): 0.13 Ohm

Empaquetado / Estuche: TO-274AA

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IRFPS37N50APBF Datasheet (PDF)

1.1. irfps37n50apbf.pdf Size:153K _upd-mosfet

IRFPS37N50APBF
IRFPS37N50APBF

PD- 95142 IRFPS37N50APbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 0.13Ω 36A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

1.2. irfps37n50a.pdf Size:115K _international_rectifier

IRFPS37N50APBF
IRFPS37N50APBF

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13? 36A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current SU

 1.3. irfps37n50apbf.pdf Size:173K _international_rectifier

IRFPS37N50APBF
IRFPS37N50APBF

PD- 95142 IRFPS37N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 0.13? 36A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Vo

1.4. irfps37n50a sihfps37n50a.pdf Size:177K _vishay

IRFPS37N50APBF
IRFPS37N50APBF

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) (?)VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Current Confi

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