IRFPS37N50APBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS37N50APBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 446 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 98 nS

Cossⓘ - Capacitancia de salida: 810 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO-274AA

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IRFPS37N50APBF datasheet

 ..1. Size:153K  international rectifier
 irfps37n50apbf.pdf pdf_icon

IRFPS37N50APBF

PD- 95142 IRFPS37N50APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 0.13 36A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

 3.1. Size:115K  international rectifier
 irfps37n50a.pdf pdf_icon

IRFPS37N50APBF

PD- 91822C SMPS MOSFET IRFPS37N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 3.2. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf pdf_icon

IRFPS37N50APBF

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

 3.3. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf pdf_icon

IRFPS37N50APBF

IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (Max.) ( )VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 180 COMPLIANT Ruggedness Qgs (nC) 46 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 71 and Cur

MOSTRAR MÁS

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