IRFPS37N50APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPS37N50APBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 446 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO-274AA
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IRFPS37N50APBF Datasheet (PDF)
irfps37n50apbf.pdf
PD- 95142IRFPS37N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 0.13 36Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan
irfps37n50a.pdf
PD- 91822CSMPS MOSFETIRFPS37N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre
irfps37n50a sihfps37n50a.pdf
IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps37n50a sihfps37n50a.pdf
IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur
irfps37n50a.pdf
isc N-Channel MOSFET Transistor IRFPS37N50AFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
Otros transistores... IRFPG32 , IRFPG40PBF , IRFPG42 , IRFPG50PBF , IRFPG52 , IRFPS29N60LPBF , IRFPS30N60KPBF , IRFPS35N50LPBF , CS150N03A8 , IRFPS3810PBF , IRFPS3815PBF , IRFPS38N60L , IRFPS38N60LPBF , IRFPS40N50L , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF .
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Recientemente añadidas las descripciónes de los transistores:
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