IRFPS37N50APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 95142IRFPS37N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 0.13 36Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

PD- 91822CSMPS MOSFETIRFPS37N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

isc N-Channel MOSFET Transistor IRFPS37N50AFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.