Справочник MOSFET. IRFPS37N50APBF

 

IRFPS37N50APBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFPS37N50APBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 446 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 98 ns
   Cossⓘ - Выходная емкость: 810 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: TO-274AA

 Аналог (замена) для IRFPS37N50APBF

 

 

IRFPS37N50APBF Datasheet (PDF)

 ..1. Size:153K  international rectifier
 irfps37n50apbf.pdf

IRFPS37N50APBF IRFPS37N50APBF

PD- 95142IRFPS37N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 500V 0.13 36Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

 3.1. Size:115K  international rectifier
 irfps37n50a.pdf

IRFPS37N50APBF IRFPS37N50APBF

PD- 91822CSMPS MOSFETIRFPS37N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 0.13 36A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

 3.2. Size:177K  vishay
 irfps37n50a sihfps37n50a.pdf

IRFPS37N50APBF IRFPS37N50APBF

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

 3.3. Size:176K  infineon
 irfps37n50a sihfps37n50a.pdf

IRFPS37N50APBF IRFPS37N50APBF

IRFPS37N50A, SiHFPS37N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) (Max.) ()VGS = 10 V 0.13 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 180COMPLIANTRuggednessQgs (nC) 46 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 71and Cur

 3.4. Size:310K  inchange semiconductor
 irfps37n50a.pdf

IRFPS37N50APBF IRFPS37N50APBF

isc N-Channel MOSFET Transistor IRFPS37N50AFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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