IRFPS40N60KPBF Todos los transistores

 

IRFPS40N60KPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS40N60KPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 570 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 330 nC

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 750 pF

Resistencia drenaje-fuente RDS(on): 0.13 Ohm

Empaquetado / Estuche: TO-274AA

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IRFPS40N60KPBF Datasheet (PDF)

1.1. irfps40n60k irfps40n60kpbf.pdf Size:180K _upd-mosfet

IRFPS40N60KPBF
IRFPS40N60KPBF

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ()VGS = 10 V 0.110 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

1.2. irfps40n60kpbf.pdf Size:196K _international_rectifier

IRFPS40N60KPBF
IRFPS40N60KPBF

PD - 95702 SMPS MOSFET IRFPS40N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) 600V 0.110 ? 40A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rug

 1.3. irfps40n60k.pdf Size:107K _international_rectifier

IRFPS40N60KPBF
IRFPS40N60KPBF

PD - 94384 SMPS MOSFET IRFPS40N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) 600V 0.110 ? 40A Uninterruptible Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness SUPER TO-247AC

1.4. irfps40n60k sihfps40n60k.pdf Size:178K _vishay

IRFPS40N60KPBF
IRFPS40N60KPBF

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) (?)VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current Configura

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