All MOSFET. IRFPS40N60KPBF Datasheet

 

IRFPS40N60KPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFPS40N60KPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 570 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 330 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-274AA

 IRFPS40N60KPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFPS40N60KPBF Datasheet (PDF)

 ..1. Size:196K  international rectifier
irfps40n60kpbf.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

PD - 95702SMPS MOSFETIRFPS40N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)600V 0.110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/

 ..2. Size:180K  vishay
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

 3.1. Size:107K  international rectifier
irfps40n60k.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

PD - 94384SMPS MOSFETIRFPS40N60KHEXFET Power MOSFETApplications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS)600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt RuggednessSUPER TO-

 3.2. Size:178K  vishay
irfps40n60k sihfps40n60k.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

IRFPS40N60K, SiHFPS40N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 0.110RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 330RuggednessQgs (nC) 84 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 150and Current

 6.1. Size:173K  international rectifier
irfps40n50lpbf.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications

 6.2. Size:111K  international rectifier
irfps40n50l.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

PD- 93923BSMPS MOSFETIRFPS40N50LApplicationsHEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching500V 0.087 46A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dtRuggedness Fully Character

 6.3. Size:187K  vishay
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 6.4. Size:185K  vishay
irfps40n50l sihfps40n50l.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

IRFPS40N50L, SiHFPS40N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS Applications AvailableRDS(on) ()VGS = 10 V 0.087RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 380COMPLIANTRequirementsQgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 6.5. Size:150K  vishay
irfps40n50lpbf.pdf

IRFPS40N60KPBF IRFPS40N60KPBF

"IRFPS40N50LPBF"PD- 95141IRFPS40N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 170ns 46A0.087 Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for ext

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFS634B | BUZ80 | BRCS080N02RA | KI4511DY | STB4N62K3 | CEU11P20 | CED6042

 

 
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