IRFR15N20DPBF Todos los transistores

 

IRFR15N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR15N20DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Tiempo de elevación (tr): 32 nS

Conductancia de drenaje-sustrato (Cd): 170 pF

Resistencia drenaje-fuente RDS(on): 0.165 Ohm

Empaquetado / Estuche: TO-252

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IRFR15N20DPBF Datasheet (PDF)

1.1. irfr15n20dpbf.pdf Size:225K _upd-mosfet

IRFR15N20DPBF
IRFR15N20DPBF

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165Ω 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

1.2. irfr15n20d.pdf Size:230K _international_rectifier

IRFR15N20DPBF
IRFR15N20DPBF

PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.165? 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR15N

 1.3. irfr15n20d.pdf Size:242K _inchange_semiconductor

IRFR15N20DPBF
IRFR15N20DPBF

isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤165mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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