IRFR15N20DPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR15N20DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm

Encapsulados: TO-252

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IRFR15N20DPBF datasheet

 ..1. Size:225K  international rectifier
 irfr15n20dpbf irfu15n20dpbf.pdf pdf_icon

IRFR15N20DPBF

PD - 95355A IRFR15N20DPbF SMPS MOSFET IRFU15N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.165 17A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-P

 4.1. Size:230K  international rectifier
 irfr15n20d.pdf pdf_icon

IRFR15N20DPBF

PD - 94245 IRFR15N20D SMPS MOSFET IRFU15N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.165 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current I

 4.2. Size:1603K  cn vbsemi
 irfr15n20dtr.pdf pdf_icon

IRFR15N20DPBF

IRFR15N20DTR www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RA

 4.3. Size:242K  inchange semiconductor
 irfr15n20d.pdf pdf_icon

IRFR15N20DPBF

isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20D FEATURES Static drain-source on-resistance RDS(on) 165m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

MOSTRAR MÁS

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