IRFR15N20DPBF Todos los transistores

 

IRFR15N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR15N20DPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.165 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de IRFR15N20DPBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRFR15N20DPBF Datasheet (PDF)

 ..1. Size:225K  international rectifier
 irfr15n20dpbf irfu15n20dpbf.pdf pdf_icon

IRFR15N20DPBF

PD - 95355AIRFR15N20DPbFSMPS MOSFET IRFU15N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.165 17Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-P

 4.1. Size:230K  international rectifier
 irfr15n20d.pdf pdf_icon

IRFR15N20DPBF

PD - 94245IRFR15N20DSMPS MOSFET IRFU15N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.165 17ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

 4.2. Size:1603K  cn vbsemi
 irfr15n20dtr.pdf pdf_icon

IRFR15N20DPBF

IRFR15N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA

 4.3. Size:242K  inchange semiconductor
 irfr15n20d.pdf pdf_icon

IRFR15N20DPBF

isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20DFEATURESStatic drain-source on-resistance:RDS(on)165mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

MOSTRAR MÁS

Otros transistores... IRFPS38N60LPBF , IRFPS40N50L , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF , IRFPS43N50K , IRFPS43N50KPBF , IRFRC20PBF , IRFP450 , IRFR18N15DPBF , IRFR1N60APBF , IRFR210PBF , IRFR214PBF , IRFR220BTMFP001 , IRFR220NPBF , IRFR220PBF , IRFR224PBF .

History: BUZ84A

 

 
Back to Top

 


 
.