IRFR15N20DPBF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRFR15N20DPBF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 170 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
Тип корпуса: TO-252
Аналог (замена) для IRFR15N20DPBF
IRFR15N20DPBF Datasheet (PDF)
irfr15n20dpbf irfu15n20dpbf.pdf

PD - 95355AIRFR15N20DPbFSMPS MOSFET IRFU15N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.165 17Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-P
irfr15n20d.pdf

PD - 94245IRFR15N20DSMPS MOSFET IRFU15N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.165 17ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI
irfr15n20dtr.pdf

IRFR15N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA
irfr15n20d.pdf

isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20DFEATURESStatic drain-source on-resistance:RDS(on)165mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRFPS38N60LPBF , IRFPS40N50L , IRFPS40N50LPBF , IRFPS40N60K , IRFPS40N60KPBF , IRFPS43N50K , IRFPS43N50KPBF , IRFRC20PBF , P60NF06 , IRFR18N15DPBF , IRFR1N60APBF , IRFR210PBF , IRFR214PBF , IRFR220BTMFP001 , IRFR220NPBF , IRFR220PBF , IRFR224PBF .
History: JFPC5N65C | IRFR220BTMFP001
History: JFPC5N65C | IRFR220BTMFP001



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2n5401 transistor datasheet | 2n2222 data sheet | irf3205 datasheet | oc71 | njw0302g | 2n3904 transistor equivalent | 2sc2312 | bu406 datasheet