IRFR120N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR120N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9.4 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 16.7 nC

Resistencia drenaje-fuente RDS(on): 0.21 Ohm

Empaquetado / Estuche: TO252AA

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IRFR120N Datasheet (PDF)

1.1. irfr120npbf irfu120npbf.pdf Size:390K _international_rectifier

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

1.2. irfr120n.pdf Size:142K _international_rectifier

PD - 91365B IRFR/U120N HEXFET® Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21Ω Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. T

3.1. irfr120a irfu120a.pdf Size:256K _fairchild_semi

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

3.2. irfr120atm.pdf Size:254K _international_rectifier

3.3. irfr120pbf irfu120pbf.pdf Size:1326K _international_rectifier

PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF Document Number: 91266 www.vishay.com 5 IRFR/U120PbF Document Number: 91266 www.vishay.com 6 IRFR/U12

3.4. irfr120zpbf irfu120zpbf.pdf Size:318K _international_rectifier

PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 190mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 8.7A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- r

3.5. irfr1205pbf irfu1205pbf.pdf Size:393K _international_rectifier

PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U1205PbF 2 www.irf.com IRFR/U1205PbF www.irf.com 3 IRFR/U1205PbF 4 www.irf.com IRFR/U1205PbF www.irf.com 5 IRFR/U1205PbF 6 www.irf.com IRFR/U1205PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Tr

3.6. irfr120.pdf Size:168K _international_rectifier

3.7. auirfr120ztrl.pdf Size:309K _international_rectifier

PD - 96345 AUIRFR120Z AUIRFU120Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D V(BR)DSS 100V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 150mΩ l 175°C Operating Temperature G l Fast Switching max. 190mΩ l Repetitive Avalanche Allowed up to Tjmax S ID 8.7A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specificall

3.8. irfr1205.pdf Size:144K _international_rectifier

PD - 91318B IRFR/U1205 HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027Ω Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This

3.9. irfr120a.pdf Size:499K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

3.10. irfr120pbf irfu120pbf sihfr120 sihfu120.pdf Size:2013K _vishay

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 0.27 • Repetitive Avalanche Rated Qg (Max.) (nC) 16 • Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel Q

3.11. irfr120 irfu120 sihfr120 sihfu120.pdf Size:1989K _vishay

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