All MOSFET. IRFR120N Datasheet

 

IRFR120N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR120N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 16.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm

Package: TO252AA

IRFR120N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR120N Datasheet (PDF)

1.1. irfr120npbf.pdf Size:390K _upd

IRFR120N
IRFR120N

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

1.2. irfr120npbf irfu120npbf.pdf Size:390K _international_rectifier

IRFR120N
IRFR120N

PD - 95067A IRFR/U120NPbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U120NPbF 2 www.irf.com IRFR/U120NPbF www.irf.com 3 IRFR/U120NPbF 4 www.irf.com IRFR/U120NPbF www.irf.com 5 IRFR/U120NPbF 6 www.irf.com IRFR/U120NPbF www.irf.com 7 IRFR/U120NPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMP

 1.3. irfr120n.pdf Size:142K _international_rectifier

IRFR120N
IRFR120N

PD - 91365B IRFR/U120N HEXFET® Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21Ω Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. T

1.4. irfr120n.pdf Size:241K _inchange_semiconductor

IRFR120N
IRFR120N

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤210mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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