IRFR24N15DPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR24N15DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 5 V

Qgⓘ - Carga de la puerta: 30 nC

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: TO-252

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IRFR24N15DPBF datasheet

 ..1. Size:276K  international rectifier
 irfr24n15dpbf.pdf pdf_icon

IRFR24N15DPBF

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch

 ..2. Size:276K  international rectifier
 irfr24n15dpbf irfu24n15dpbf.pdf pdf_icon

IRFR24N15DPBF

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch

 4.1. Size:108K  international rectifier
 irfr24n15d.pdf pdf_icon

IRFR24N15DPBF

PD - 94392 IRFR24N15D SMPS MOSFET IRFU24N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 95m 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRF

 4.2. Size:241K  inchange semiconductor
 irfr24n15d.pdf pdf_icon

IRFR24N15DPBF

isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15D FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15

MOSTRAR MÁS

Otros transistores... IRFR220BTMFP001, IRFR220NPBF, IRFR220PBF, IRFR224PBF, IRFR2307ZPBF, IRFR230BTMAM002, IRFR2405PBF, IRFR2407PBF, IRF520, IRFR2905ZPBF, ZVN0545ASTOB, ZVN0545ASTZ, ZVN0545GTA, ZVN0545GTC, ZVN2106ASTOA, ZVN2106ASTOB, ZVN2106ASTZ