IRFR24N15DPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR24N15DPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 53
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
TO-252
IRFR24N15DPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR24N15DPBF
Datasheet (PDF)
..1. Size:276K international rectifier
irfr24n15dpbf.pdf
PD - 95370BIRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 95m 24ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-PakIRFR24N15DPbF IRFU24N15DPbFl Fully Characterized Avalanch
..2. Size:276K infineon
irfr24n15dpbf irfu24n15dpbf.pdf
PD - 95370BIRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 95m 24ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-PakIRFR24N15DPbF IRFU24N15DPbFl Fully Characterized Avalanch
4.1. Size:108K international rectifier
irfr24n15d.pdf
PD - 94392IRFR24N15DSMPS MOSFET IRFU24N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 95m 24ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRF
4.2. Size:241K inchange semiconductor
irfr24n15d.pdf
isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15DFEATURESStatic drain-source on-resistance:RDS(on)95mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 15
8.1. Size:221K international rectifier
irfr2405pbf irfu2405pbf.pdf
PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing
8.2. Size:204K international rectifier
auirfr2405.pdf
PD - 97688AAUTOMOTIVE GRADEAUIRFR2405Features HEXFET Power MOSFETl Advanced Planar TechnologyDV(BR)DSS55V Dynamic dV/dT RatingRDS(on) typ.l Low On-Resistance 11.8ml 175C Operating Temperaturemax 16mGl Fast SwitchingID (Silicon Limited)56Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)30Aup to Tjmaxl Lead-Free, R
8.3. Size:129K international rectifier
irfr2405.pdf
PD - 93861IRFR2405IRFU2405HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405)D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.016G Fully Avalanche RatedDescriptionID = 56A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extreme
8.4. Size:381K international rectifier
irfr2407pbf.pdf
PD-95033AIRFR2407PbFIRFU2407PbF Lead-Freewww.irf.com 112/10/04IRFR/U2407PbF2 www.irf.comIRFR/U2407PbFwww.irf.com 3IRFR/U2407PbF4 www.irf.comIRFR/U2407PbFwww.irf.com 5IRFR/U2407PbF6 www.irf.comIRFR/U2407PbFwww.irf.com 7IRFR/U2407PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat
8.5. Size:129K international rectifier
irfr2407.pdf
PD -93862IRFR2407IRFU2407HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407)D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.026G Fully Avalanche RatedDescriptionID = 42A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremel
8.6. Size:381K infineon
irfr2407pbf irfu2407pbf.pdf
PD-95033AIRFR2407PbFIRFU2407PbF Lead-Freewww.irf.com 112/10/04IRFR/U2407PbF2 www.irf.comIRFR/U2407PbFwww.irf.com 3IRFR/U2407PbF4 www.irf.comIRFR/U2407PbFwww.irf.com 5IRFR/U2407PbF6 www.irf.comIRFR/U2407PbFwww.irf.com 7IRFR/U2407PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat
8.7. Size:221K infineon
irfr2405pbf irfu2405pbf.pdf
PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing
8.8. Size:134K infineon
irfr2407 irfu2407.pdf
PD -93862IRFR2407IRFU2407HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407)D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.026G Fully Avalanche RatedDescriptionID = 42A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremel
8.9. Size:473K infineon
auirfr2407.pdf
AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi
8.10. Size:241K inchange semiconductor
irfr2405.pdf
isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405FEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 V
8.11. Size:241K inchange semiconductor
irfr2407.pdf
isc N-Channel MOSFET Transistor IRFR2407, IIRFR2407FEATURESStatic drain-source on-resistance:RDS(on)26mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-
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