All MOSFET. IRFR24N15DPBF Datasheet

 

IRFR24N15DPBF Datasheet and Replacement


   Type Designator: IRFR24N15DPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-252
 

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IRFR24N15DPBF Datasheet (PDF)

 ..1. Size:276K  international rectifier
 irfr24n15dpbf.pdf pdf_icon

IRFR24N15DPBF

PD - 95370BIRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 95m 24ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-PakIRFR24N15DPbF IRFU24N15DPbFl Fully Characterized Avalanch

 ..2. Size:276K  international rectifier
 irfr24n15dpbf irfu24n15dpbf.pdf pdf_icon

IRFR24N15DPBF

PD - 95370BIRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 95m 24ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-PakIRFR24N15DPbF IRFU24N15DPbFl Fully Characterized Avalanch

 4.1. Size:108K  international rectifier
 irfr24n15d.pdf pdf_icon

IRFR24N15DPBF

PD - 94392IRFR24N15DSMPS MOSFET IRFU24N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 95m 24ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRF

 4.2. Size:241K  inchange semiconductor
 irfr24n15d.pdf pdf_icon

IRFR24N15DPBF

isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15DFEATURESStatic drain-source on-resistance:RDS(on)95mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 15

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