IRFR2905ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR2905ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 29 nC

trⓘ - Tiempo de subida: 66 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm

Encapsulados: TO-252

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IRFR2905ZPBF datasheet

 ..1. Size:336K  international rectifier
 irfr2905zpbf irfu2905zpbf.pdf pdf_icon

IRFR2905ZPBF

PD - 95943B IRFR2905ZPbF IRFU2905ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 14.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 5.1. Size:285K  international rectifier
 auirfr2905ztr.pdf pdf_icon

IRFR2905ZPBF

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1m l Ultra Low On-Resistance l 175 C Operating Temperature max. 14.5m G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *

 5.2. Size:668K  infineon
 auirfr2905z.pdf pdf_icon

IRFR2905ZPBF

AUTOMOTIVE GRADE AUIRFR2905Z Features VDSS 55V Advanced Process Technology RDS(on) typ. 11.1m Ultra Low On-Resistance 175 C Operating Temperature max. 14.5m Fast Switching ID (Silicon Limited) 59A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Des

 5.3. Size:242K  inchange semiconductor
 irfr2905z.pdf pdf_icon

IRFR2905ZPBF

isc N-Channel MOSFET Transistor IRFR2905Z, IIRFR2905Z FEATURES Static drain-source on-resistance RDS(on) 14.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G

MOSTRAR MÁS

Otros transistores... IRFR220NPBF, IRFR220PBF, IRFR224PBF, IRFR2307ZPBF, IRFR230BTMAM002, IRFR2405PBF, IRFR2407PBF, IRFR24N15DPBF, IRF2807, ZVN0545ASTOB, ZVN0545ASTZ, ZVN0545GTA, ZVN0545GTC, ZVN2106ASTOA, ZVN2106ASTOB, ZVN2106ASTZ, ZVN2106B