IRFR2905ZPBF - параметры транзистора MOSFET, его аналоги, datasheet

IRFR2905ZPBF Datasheet (PDF)

..1. Size:336K international rectifier
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PD - 95943BIRFR2905ZPbFIRFU2905ZPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 14.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

5.1. Size:285K international rectifier
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PD - 96320AUTOMOTIVE GRADEAUIRFR2905ZHEXFET Power MOSFETV(BR)DSS55VFeaturesDl Advanced Process TechnologyRDS(on) typ.11.1ml Ultra Low On-Resistancel 175C Operating Temperature max. 14.5mGl Fast SwitchingID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited) 42A l Automotive Qualified *

5.2. Size:668K infineon
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AUTOMOTIVE GRADE AUIRFR2905Z Features VDSS 55V Advanced Process Technology RDS(on) typ. 11.1m Ultra Low On-Resistance 175C Operating Temperature max. 14.5m Fast Switching ID (Silicon Limited) 59A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Des

5.3. Size:242K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFR2905Z, IIRFR2905ZFEATURESStatic drain-source on-resistance:RDS(on)14.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV G

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