IRFR210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR210

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 8.2 nC

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: TO252AA

Búsqueda de reemplazo de MOSFET IRFR210

IRFR210 Datasheet (PDF)

1.1. irfr210b irfu210b.pdf Size:724K _fairchild_semi

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.2 nC) planar, DMOS technology. • Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t

1.2. irfr210b irfu210b 2.pdf Size:655K _fairchild_semi

1.3. irfr210.pdf Size:171K _international_rectifier

1.4. irfr210pbf irfu210pbf.pdf Size:1298K _international_rectifier

PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free 12/9/04 Document Number: 91268 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF Document Number: 91268 www.vishay.com 5 IRFR/U210PbF Document Number: 91268 www.vishay.com 6 IRFR/U21

1.5. irfr210a.pdf Size:501K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Ω Low RDS(ON) : 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

1.6. irfr210pbf irfu210pbf sihfr210 sihfu210.pdf Size:821K _vishay

IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 1.5 • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas

1.7. irfr210 irfu210 sihfr210 sihfu210.pdf Size:2066K _vishay

IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 1.5 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 • Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 • Available in

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: