IRFR210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR210
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 25 W
Tensión drenaje-fuente (Vds): 200 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 2.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 8.2 nC
Resistencia drenaje-fuente RDS(on): 1.5 Ohm
Empaquetado / Estuche: TO252AA
Búsqueda de reemplazo de MOSFET IRFR210
IRFR210 Datasheet (PDF)
1.1. irfr210pbf.pdf 
Size:821K _upd-mosfet
IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 1.5 • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas
1.2. irfr210b irfu210b.pdf Size:724K _fairchild_semi
November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast swi
1.3. irfr210b irfu210b 2.pdf Size:655K _fairchild_semi
November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast swi
1.4. irfr210.pdf Size:171K _international_rectifier
1.5. irfr210pbf irfu210pbf.pdf Size:1298K _international_rectifier
PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number: 91268 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF Document Number: 91268 www.vishay.com 5 IRFR/U210PbF Document Number: 91268 www.vishay.com 6 IRFR/U210PbF
1.6. irfr210a.pdf Size:501K _samsung
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Low RDS(ON) : 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi
1.7. irfr210 irfu210 sihfr210 sihfu210.pdf Size:2066K _vishay
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in Tape and Reel C
Otros transistores... IRFR111 , IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRF520 , IRFR210A , IRFR212 , IRFR214 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 .
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