IRFR210A Todos los transistores

 

IRFR210A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR210A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 26 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 2.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: DPAK

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IRFR210A Datasheet (PDF)

1.1. irfr210a.pdf Size:501K _samsung

IRFR210A
IRFR210A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Low RDS(ON) : 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

3.1. irfr210pbf.pdf Size:821K _upd-mosfet

IRFR210A
IRFR210A

IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 1.5 • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 • Straight Lead (IRFU210, SiHFU210) • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas

3.2. irfr210b irfu210b 2.pdf Size:655K _fairchild_semi

IRFR210A
IRFR210A

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast swi

 3.3. irfr210b irfu210b.pdf Size:724K _fairchild_semi

IRFR210A
IRFR210A

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast swi

3.4. irfr210pbf irfu210pbf.pdf Size:1298K _international_rectifier

IRFR210A
IRFR210A

PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number: 91268 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF Document Number: 91268 www.vishay.com 5 IRFR/U210PbF Document Number: 91268 www.vishay.com 6 IRFR/U210PbF

 3.5. irfr210.pdf Size:171K _international_rectifier

IRFR210A
IRFR210A

3.6. irfr210 irfu210 sihfr210 sihfu210.pdf Size:2066K _vishay

IRFR210A
IRFR210A

IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in Tape and Reel C

Otros transistores... IRFR120 , IRFR1205 , IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFP450 , IRFR212 , IRFR214 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A .

 
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