IRFR210A
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR210A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 26
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO252
IRFR210A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR210A
Datasheet (PDF)
..1. Size:501K samsung
irfr210a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
7.2. Size:1298K international rectifier
irfr210pbf irfu210pbf.pdf
PD - 95068AIRFR210PbFIRFU210PbF Lead-Free12/9/04Document Number: 91268 www.vishay.com1IRFR/U210PbFDocument Number: 91268 www.vishay.com2IRFR/U210PbFDocument Number: 91268 www.vishay.com3IRFR/U210PbFDocument Number: 91268 www.vishay.com4IRFR/U210PbFDocument Number: 91268 www.vishay.com5IRFR/U210PbFDocument Number: 91268 www.vishay.com6IRFR/U21
7.4. Size:655K fairchild semi
irfr210b irfu210b 2.pdf
November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
7.5. Size:724K fairchild semi
irfr210b irfu210b.pdf
November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t
7.6. Size:821K vishay
irfr210pbf irfu210pbf sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210)Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas
7.7. Size:2066K vishay
irfr210 irfu210 sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 1.5 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210)Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210)Qgd (nC) 4.5 Available in
Datasheet: IRFR120
, IRFR1205
, IRFR120A
, IRFR120N
, IRFR121
, IRFR130A
, IRFR1N60A
, IRFR210
, IRF9540
, IRFR212
, IRFR214
, IRFR214A
, IRFR220
, IRFR220A
, IRFR222
, IRFR224
, IRFR224A
.
