IRFR214 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR214

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 8.2 nC

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TO252AA

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IRFR214 Datasheet (PDF)

1.1. irfr214b irfu214b.pdf Size:715K _fairchild_semi

November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.1 nC) planar, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t

1.2. irfr214.pdf Size:169K _international_rectifier

1.3. irfr214pbf irfu214pbf.pdf Size:1415K _international_rectifier

PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free 12/3/04 Document Number: 91269 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF Document Number: 91269 www.vishay.com 5 IRFR/U214PbF Document Number: 91269 www.vishay.com 6 IRFR/U214

1.4. irfr214a.pdf Size:510K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

1.5. irfr214 irfu214 sihfr214 sihfu214.pdf Size:2021K _vishay

IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 10 V 2.0 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 • Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 • Available

1.6. irfr214pbf irfu214pbf sihfr214 sihfu214.pdf Size:859K _vishay

IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 2.0 • Surface Mount (IRFR214, SiHFR214) • Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas

Otros transistores... IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 , IRF510 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFR230A , IRFR310 .

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