All MOSFET. IRFR214 Datasheet

 

IRFR214 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR214

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO252AA

IRFR214 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR214 Datasheet (PDF)

1.1. irfr214pbf.pdf Size:859K _upd-mosfet

IRFR214
IRFR214

IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 2.0 • Surface Mount (IRFR214, SiHFR214) • Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 • Available in Tape and Reel Qgs (nC) 1.8 • Fast Switching Qgd (nC) 4.5 • Eas

1.2. irfr214b irfu214b.pdf Size:715K _fairchild_semi

IRFR214
IRFR214

November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast swi

 1.3. irfr214.pdf Size:169K _international_rectifier

IRFR214
IRFR214

1.4. irfr214pbf irfu214pbf.pdf Size:1415K _international_rectifier

IRFR214
IRFR214

PD- 95384A IRFR214PbF IRFU214PbF Lead-Free 12/3/04 Document Number: 91269 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF Document Number: 91269 www.vishay.com 5 IRFR/U214PbF Document Number: 91269 www.vishay.com 6 IRFR/U214PbF

 1.5. irfr214a.pdf Size:510K _samsung

IRFR214
IRFR214

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

1.6. irfr214 irfu214 sihfr214 sihfu214.pdf Size:2021K _vishay

IRFR214
IRFR214

IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 2.0 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 Available in Tape and Ree

Datasheet: IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 , IRF510 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFR230A , IRFR310 .

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