IRFR214 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR214
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.2(max) nC
trⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO252
IRFR214 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR214 Datasheet (PDF)
irfr214pbf irfu214pbf.pdf
PD- 95384AIRFR214PbFIRFU214PbF Lead-Free12/3/04Document Number: 91269 www.vishay.com1IRFR/U214PbFDocument Number: 91269 www.vishay.com2IRFR/U214PbFDocument Number: 91269 www.vishay.com3IRFR/U214PbFDocument Number: 91269 www.vishay.com4IRFR/U214PbFDocument Number: 91269 www.vishay.com5IRFR/U214PbFDocument Number: 91269 www.vishay.com6IRFR/U214
irfr214 irfu214 sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 2.0 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210)Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210)Qgd (nC) 4.5 Available
irfr214pbf irfu214pbf sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214)Qg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas
irfr214.pdf
iscN-Channel MOSFET Transistor IRFR214FEATURESLow drain-source on-resistance:RDS(ON) 2.0 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
irfr214b irfu214b.pdf
November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t
irfr214a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char
Datasheet: IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 , 2SK3878 , IRFR214A , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFR230A , IRFR310 .
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