IRFR214A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR214A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente |Vds|: 250 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 8.5 nC

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET IRFR214A

IRFR214A Datasheet (PDF)

0.1. irfr214a.pdf Size:510K _samsung

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

7.1. irfr214b irfu214b.pdf Size:715K _fairchild_semi

November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t

7.2. irfr214.pdf Size:169K _international_rectifier

7.3. irfr214pbf irfu214pbf.pdf Size:1415K _international_rectifier

PD- 95384AIRFR214PbFIRFU214PbF Lead-Free12/3/04Document Number: 91269 www.vishay.com1IRFR/U214PbFDocument Number: 91269 www.vishay.com2IRFR/U214PbFDocument Number: 91269 www.vishay.com3IRFR/U214PbFDocument Number: 91269 www.vishay.com4IRFR/U214PbFDocument Number: 91269 www.vishay.com5IRFR/U214PbFDocument Number: 91269 www.vishay.com6IRFR/U214

7.4. irfr214 irfu214 sihfr214 sihfu214.pdf Size:2021K _vishay

IRFR214, IRFU214, SiHFR214, SiHFU214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 2.0 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210)Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210)Qgd (nC) 4.5 Available

7.5. irfr214pbf irfu214pbf sihfr214 sihfu214.pdf Size:859K _vishay

IRFR214, IRFU214, SiHFR214, SiHFU214www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214)Qg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas

7.6. irfr214.pdf Size:287K _inchange_semiconductor

iscN-Channel MOSFET Transistor IRFR214FEATURESLow drain-source on-resistance:RDS(ON) 2.0 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Otros transistores... IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 , IRFR214 , IRF830 , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFR230A , IRFR310 , IRFR310A .

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