IRFR220 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFR220, IRFU220Data Sheet January 20024.6A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFETs 4.6A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.800power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval

PD - 95069AIRFR220PbFIRFU220PbF Lead-Free12/14/04Document Number: 91270 www.vishay.com1IRFR/U220PbFDocument Number: 91270 www.vishay.com2IRFR/U220PbFDocument Number: 91270 www.vishay.com3IRFR/U220PbFDocument Number: 91270 www.vishay.com4IRFR/U220PbFDocument Number: 91270 www.vishay.com5IRFR/U220PbFDocument Number: 91270 www.vishay.com6IRFR/U2

IRFR220, IRFU220, SiHFR220, SiHFU220Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Surface Mount (IRFR220/SiHFR220)Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 7.9Configuration Si

IRFR220, IRFU220, SiHFR220, SiHFU220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 200 Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220)Qg (Max.) (nC) 14 Available in tape and reelQgs (nC) 3.0Available Fast switchingQgd (nC) 7

IRFR220, IRFU220, SiHFR220, SiHFU220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.80 Repetitive Avalanche RatedQg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220)Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220)Qgd (nC) 7.9 Available in T

iscN-Channel MOSFET Transistor IRFR220FEATURESLow drain-source on-resistance:RDS(ON) 0.8 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

IRFR/U220AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.6 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

PD- 94048IRFR220NSMPS MOSFET IRFU220NHEXFET Power MOSFETApplicationsVDSS RDS(on) max (m) ID High frequency DC-DC converters200V 600 5.0ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pak Fully Characterized Avalanche VoltageIRFR22ON IRFU220

PD- 95063AIRFR220NPbFSMPS MOSFET IRFU220NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max (m) IDl High frequency DC-DC converters200V 600 5.0Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pakl Fully Characterized Avalanche V

IRFR220N-channel enhancement mode field effect transistorRev. 01 14 August 2001 Product dataM3D3001. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:IRFR220 in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance Surface mount package.3. Applications Switched mode p

November 2001IRFR220B / IRFU220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteri

isc N-Channel MOSFET Transistor IRFR220N, IIRFR220NFEATURESStatic drain-source on-resistance:RDS(on)600mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage