All MOSFET. IRFR220 Equivalents Search

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IRFR220, IRFU220 Data Sheet January 2002 4.6A, 200V, 0.800 Ohm, N-Channel Power Features MOSFETs 4.6A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.800 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval... See More ⇒

PD - 95069A IRFR220PbF IRFU220PbF Lead-Free 12/14/04 Document Number 91270 www.vishay.com 1 IRFR/U220PbF Document Number 91270 www.vishay.com 2 IRFR/U220PbF Document Number 91270 www.vishay.com 3 IRFR/U220PbF Document Number 91270 www.vishay.com 4 IRFR/U220PbF Document Number 91270 www.vishay.com 5 IRFR/U220PbF Document Number 91270 www.vishay.com 6 IRFR/U2... See More ⇒

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IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 7.9 Configuration Si... See More ⇒

IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 200 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220) Qg (Max.) (nC) 14 Available in tape and reel Qgs (nC) 3.0 Available Fast switching Qgd (nC) 7... See More ⇒

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.80 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 Available in T... See More ⇒

iscN-Channel MOSFET Transistor IRFR220 FEATURES Low drain-source on-resistance RDS(ON) 0.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒

PD- 94048 IRFR220N SMPS MOSFET IRFU220N HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID High frequency DC-DC converters 200V 600 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR22ON IRFU220... See More ⇒

PD- 95063A IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID l High frequency DC-DC converters 200V 600 5.0A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche V... See More ⇒

IRFR220 N-channel enhancement mode field effect transistor Rev. 01 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode p... See More ⇒

November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to ... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri... See More ⇒

isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N FEATURES Static drain-source on-resistance RDS(on) 600m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒