ZVP4525GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVP4525GTA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.265 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.78 nS
Cossⓘ - Capacitancia de salida: 12.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET ZVP4525GTA
ZVP4525GTA Datasheet (PDF)
zvp4525gta zvp4525gtc.pdf
ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v
zvp4525g.pdf
ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v
zvp4525z.pdf
ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced SOT89 secondary breakdown. Applications benefiting from this device inclu
zvp4525e6ta zvp4525e6tc.pdf
ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener
Otros transistores... ZVP4424ASTOA , ZVP4424ASTOB , ZVP4424ASTZ , ZVP4424GTA , ZVP4424GTC , ZVP4424ZTA , ZVP4525E6TA , ZVP4525E6TC , 60N06 , ZVP4525GTC , ZVP4525ZTA , ZXM41N10FTA , ZXM41N10FTC , ZXM61N02FTA , ZXM61N02FTC , ZXM61N03FTA , ZXM61N03FTC .
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