ZXM61N02FTA Todos los transistores

 

ZXM61N02FTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM61N02FTA
   Código: N02
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V
   Qgⓘ - Carga de la puerta: 3.4 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: SOT-23
 

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ZXM61N02FTA Datasheet (PDF)

 ..1. Size:151K  tysemi
 zxm61n02f zxm61n02fta.pdf pdf_icon

ZXM61N02FTA

Product specification20V N-CHANNEL ENHANCEMENT MODE MOSFETZXM61N02FSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT

 ..2. Size:877K  cn vbsemi
 zxm61n02fta.pdf pdf_icon

ZXM61N02FTA

ZXM61N02FTAwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 4.1. Size:210K  zetex
 zxm61n02ftc.pdf pdf_icon

ZXM61N02FTA

ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

 5.1. Size:212K  diodes
 zxm61n02f.pdf pdf_icon

ZXM61N02FTA

ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

MOSTRAR MÁS

Otros transistores... ZVP4424ZTA , ZVP4525E6TA , ZVP4525E6TC , ZVP4525GTA , ZVP4525GTC , ZVP4525ZTA , ZXM41N10FTA , ZXM41N10FTC , IRF3205 , ZXM61N02FTC , ZXM61N03FTA , ZXM61N03FTC , ZXM61P02FTA , ZXM61P02FTC , ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA .

 

 
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