ZXM61N02FTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM61N02FTA
Código: N02
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 VQgⓘ - Carga de la puerta: 3.4 nC
trⓘ - Tiempo de subida: 4.2 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ZXM61N02FTA
ZXM61N02FTA Datasheet (PDF)
zxm61n02f zxm61n02fta.pdf
Product specification20V N-CHANNEL ENHANCEMENT MODE MOSFETZXM61N02FSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT
zxm61n02fta.pdf
ZXM61N02FTAwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/
zxm61n02ftc.pdf
ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n02f.pdf
ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03f.pdf
ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03f.pdf
Product specificationZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT
zxm61n03fta.pdf
ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03ftc.pdf
ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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