ZXM61N02FTA datasheet, аналоги, основные параметры
Наименование производителя: ZXM61N02FTA 📄📄
Маркировка: N02
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 0.7 V
Qg ⓘ - Общий заряд затвора: 3.4 nC
tr ⓘ - Время нарастания: 4.2 ns
Cossⓘ - Выходная емкость: 50 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: SOT-23
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Аналог (замена) для ZXM61N02FTA
- подборⓘ MOSFET транзистора по параметрам
ZXM61N02FTA даташит
zxm61n02f zxm61n02fta.pdf
Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT
zxm61n02fta.pdf
ZXM61N02FTA www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/
zxm61n02ftc.pdf
ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
zxm61n02f.pdf
ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
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History: NTP27N06 | NTP30N06L | NTP18N06
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